Macro Modeling and Parameter Extraction of Lateral Double Diffused Metal Oxide Semiconductor Transistor
نویسندگان
چکیده
منابع مشابه
Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices
Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Far...
متن کاملOptimum Design for Eliminating Back Gate Bias Effect of Silicon-on- insulator Lateral Double Diffused Metal-oxide-semiconductor Field Effect Transistor with Low Doping Buried Layer
An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...
متن کاملMetal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...
متن کاملChannel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics
An analytical 2D model of subthreshold current (I DSsub), subthreshold swing (S sub), and threshold voltage (V TH) roll-off with a variation of channel doping concentration (N A) for symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the channel potential is obtained by solving the 2D Poisson's equation with the help of the evanesce...
متن کاملA compact quantum correction model for symmetric double gate metal-oxide- semiconductor field-effect transistor
Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2011
ISSN: 1229-7607
DOI: 10.4313/teem.2011.12.1.7